MIL-STD-750 Testing                   Submit Online RFQ

MIL-STD-750(F) establishes uniform methods and procedures for testing semiconductor devices suitable for use within military and aerospace electronic systems. The methods and procedures in the various parts of this standard include basic environmental, physical and electrical tests for determining resistance to deleterious effects of natural elements and conditions surrounding military and space operations.

Advanced Component Testing has been audited for Lab Suitability by the Defense Logistics Agency (DLA) for testing of MIL-SPEC product being procured by the U.S. Government.* ACT is one of few qualified and approved labs for processing and testing of components, leading the industry with testing certifications and credentials to test to MIL-STD-750 as well as MIL-STD-202 and MIL-STD-883 methods.

MIL-STD-750 Test Methods for Semiconductor Devices – Performed by ACT

1016      Insulation resistance

1022      Resistance to solvents

1026      Steady state operation life

1027      Steady state operation life (sample plan)

1031      High-temperature life test (nonoperating)

1032      High-temp life test (nonop/Sample plan)    

1033      Reverse voltage leakage stability

1036      Intermittent Life

1037      Intermittent Life (sample plan)

1038      Burn-in for diodes, rectifiers and zeners

1039      Burn-in for transistors

1040      Burn-in for thyristors

1042      Burn-in and life test for power MOSFET/IGBT

1048      Blocking Life

1049      Blocking Life (sample plan)

1051      Temperature cycling

1055      Monitored mission temperature cycling

1071      Hermetic seal

1081      Dielectrica withstanding voltage

2026      Solderability

2031      Resistance to soldering heat

2037      Bond strength (destructive bond pull test)

2066*    Physical dimensions

2068      External visual inspection

2071      Visual and Mechanincal inspection

2073      Visual inspection for Die (diodes)

2074      Internal visual inspection (discretes)

2075      Decap and internal visual inspection, design verification

2076      Radiography

2077      Scanning electron microscope inspection (SEM)

2078      Internal visual for wire bonded diodes

2100      X-ray fluorescence scan

2101      Destructive physical analysis (diodes)

2102      Destructive physical analysis (wire bonded devices)

2103      Design verification for surface mount devices

3001*    Breakdown voltage, collector to base

3005     Burnout by pulsing

3011*    Breakdown voltage, collector to emitter

3015     Drift

3020     Floating potential

3026*    Breakdown voltage, collector to base

3030      Collector to emitter voltage

3036      Collector to base cutoff current

3041      Collector to emitter cutoff current

3051      Safe operating area (continuous DC)

3052      Safe operating area (pulsed)

3053      Safe operating area (switching)

3061      Emitter to base cutoff current

3066      Base emitter voltage (saturated or nonsat)

3071      Saturation voltage and resistance

3076      Forward-current transfer ratio

3086      Static input resistance

3092      Static transconductance

3201      Small-signal, short-circuit input impedance

3206      Small-signal, short-circuit forward-current transfer ratio

3211      Small-signal, open-circuit reverse-voltage transfer ratio

3216      Small-signal, open-circuit output admittance

3221      Small-signal, short-circuit input admittance

3231      Small-signal, short-circuit output admittance

3236      Open-circuit output capacitance

3240      Input capacitance (output open- or short-circuited)

3246      Noise figure

3251      Pulse response

3255      Large-signal power gain

3256      Small-signal power gain

3261      Extrapolated unity-gain frequency

3401      Breakdown voltage, gate-to-source

3402      MOSFET gate equivalent series resistance

3403      Gate-to-source voltage or current

3404      MOSFET threshold voltage

3405      Drain-to-source on-state voltage

3407      Breakdown voltage, drain-to-source

3411      Gate reverse current

3413      Drain current

3415      Drain reverse current

3421      Static drain-to-source on-state resistance

3423      Small-signal, drain-to-source on-state resistance

3431      Small-signal, common-source, short-circuit, input capacitance

3433      Small-signal, common-source, short-circuit, reverse transfer capacitance

3453      Small-signal, common-source, short-circuit, output admittance

3455      Small-signal, common-source, short-circuit, forward transadmittance

3457      Small-signal, common-source, short-circuit, reverse transfer admittance

3459      Pulse response field-effect transistor (FET)

3461      Small-signal, common-source, short-circuit, input admittance

3469      Repetitive unclamped inductive switching

3470      Single pulse unclamped inductive switching

3471      Gate charge

3472      Switching time test

3473      Reverse recovery time (trr) and recovered charge (qrr) for power MOSFET (drain-to-source)

3474      Safe operating area for power MOSFETs or insulated gate bipolar transistors

3475      Forward transconductance (pulsed dc method) of power MOSFETs or insulated gate bipolar transistors

3477      Measurement of insulated gate bipolar transistor total switching losses and switching times

3478      Power transistor electrical dose rate

3479      Short-circuit withstand time

3501      Breakdown voltage, drain-to-source

3505      Maximum available gain of a GaAs FET

3570      GaAs FET forward gain

3575      Forward transconductance

4001*    Capacitance

4011*    Forward voltage

4016*    Reverse current leakage

4021*    Breakdown voltage (diodes)

4022*    Breakdown voltage (voltage regulators and voltage-reference diodes)

4026      Forward recovery voltage and time

4031      Reverse recovery characteristics

4036      Quality factor (Q) for voltage variable capacitance diodes

4041      Rectification efficiency

4046      Reverse current, average

4051      Small-signal reverse breakdown impedance

4056      Small-signal forward impedance

4061      Stored charge

4064      Inductive avalanche energy test for diodes

4065      Peak reverse power test

4066      Surge current and impulse clamp voltage

4071      Temperature coefficient of breakdown voltage

4076      Saturation current

4081      Thermal resistance of diodes (forward voltage, switching method)

4201      Holding current

4206      Forward blocking current

4211      Reverse blocking current

4216      Pulse response

4219      Reverse gate current

4221      Gate-trigger voltage

4223      Gate-controlled turn-on time

4224      Circuit-commutated turn-off time

4225      Gate-controlled turn-off time

4226      Forward on voltage

4231      Exponential rate of voltage rise

4301      Junction capacitance

4306      Static characteristics of tunnel diodes

4326      Series resistance

4331      Switching time

*The Defense Logistics Agency has issued ACT a Land and Maritime-VQ letter of suitability for testing to these methods.

Related Links: 8  MIL-STD-202     8  MIL-STD-883     8  Military Test Plans